发明名称 Die-level wafer contact for direct-on-barrier plating
摘要 The present invention provides a semiconductor workpiece support and contact assembly for providing localized electrical connections with the device side of the workpiece. The additional contact points help overcome the terminal effect caused by very high sheet resistance of thin barrier layers and enable plating a conformal seed layer or feature filling directly on thin barrier layers. By utilizing the streets that separate individual dice on a workpiece to make electrical connections with the workpiece and provide localized distribution of plating chemistry, the present invention provides a more uniform and conformal metallization layer.
申请公布号 US2006226019(A1) 申请公布日期 2006.10.12
申请号 US20060399762 申请日期 2006.04.07
申请人 SEMITOOL, INC. 发明人 THOMPSON RAYMON F.;MCHUGH PAUL R.;WOODRUFF DANIEL J.;WILSON GREGORY J.;EUDY STEVE L.;BASKARAN RAJESH
分类号 C25D7/12 主分类号 C25D7/12
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