| 摘要 |
A light emitting device is provided to realize uniformity of current distribution and to improve power and luminance by using a first gallium nitride layer having a hexagon shape. A first gallium nitride layer(110) is arranged on a substrate(105). Partial regions of the first gallium nitride layer are opened in a different height. When plural opened regions are connected to a circumference direction, it is a hexagon shape. A first electrode(140) is formed on each opened region of the first gallium nitride layer. An active layer(120) is formed on the relatively high region of the first gallium nitride layer. A second gallium nitride layer(130) is formed on the active region. A second electrode(150) is wholly formed on the second gallium nitride layer.
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