| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a crystallization method of a thin film material and equipment using this method which can melt the material at a maximum peak point equivalent to maximum strength I or other maximum peak points, and crystallize the material at a minimum point between two maximum peak points. <P>SOLUTION: When crystal grains are formed by irradiating a pulsed laser several times to the thin film silicon materials 12 and 112, the pulsed laser is divided into many split lasers and delayed. In the crystallization method of the thin film material in which the pulsed lasers are irradiated to the materials 12 and 112, a single pulsed laser signal waveform 2 generated by the superposition of many split lasers has the maximum peak point 23 equivalent to the maximum strength I, at least one maximum peak point 22 with strength exceeding I/2, and the minimum point 21 which is positioned between at least two adjacent maximum peak points 22 and 23 and has strength reduced to I/2 or less. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
