发明名称 MULTI-LEVEL STORAGE CIRCUIT AND ITS DRIVE METHOD
摘要 PROBLEM TO BE SOLVED: To separate an input and an output of a multi-level storage circuit from each other with fewer number of elements than heretofore. SOLUTION: The drain electrode D of a mono-electron transistor is connected to a source electrode of a field effect transistor 2, the drain electrode of the field effect transistor 2 is connected to one end of a load element, the other end of the load element 3 is connected to a power source terminal 5, and a source electrode S of the mom-electron transistor 1 is connected to a ground terminal 6. Also, a first electrode G of the mono-electron transistor 1 is connected to a connection point of the field effect transistor 2 and the load element 3, further his connection point is connected to the output terminal. Also, a second gate electrode G<SB>in</SB>is newly provided at the mono-electron transistor 1, and this second gate electrode G<SB>in</SB>is connected to an input terminal 7. Furthermore, an accumulation capacitor 8 is connected between an output terminal 8 and the ground terminal 6. a unipolar or a bipolar voltage pulse, in which the rise time and the fall time are different, is given to the input terminal 7 and the data value stored in the multi-level storing circuit, is rewritten. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006277802(A) 申请公布日期 2006.10.12
申请号 JP20050092433 申请日期 2005.03.28
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 INOKAWA HIROSHI;NISHIGUCHI KATSUHIKO
分类号 G11C11/21;H01L27/10;H01L29/66 主分类号 G11C11/21
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