发明名称 Semiconductor device having a compensation capacitor in a mesh structure
摘要 The compensation capacitor includes: a charge accumulating element having a diffusion layer, a dielectric layer, and a gate electrode layer, wherein the gate electrode layer, the dielectric layer, and the diffusion layer are stacked in this order, and at least partially overlap with each other when viewed from a direction of stacking; a metal layer for applying a voltage to the diffusion layer, the metal layer being formed above the charge accumulating element; and a contact for electrically connecting the diffusion layer and the metal layer, the contact extending between the diffusion layer and the metal layer in the direction of stacking. The gate electrode layer has a form of a mesh which extends in a direction which is perpendicular to the direction of stacking. The contact extends through an aperture of the mesh of the gate electrode layer.
申请公布号 US2006226462(A1) 申请公布日期 2006.10.12
申请号 US20060401293 申请日期 2006.04.11
申请人 ELPIDA MEMORY, INC. 发明人 OTA KEN
分类号 H01L29/94;H01L21/8242;H01L27/108;H01L29/76;H01L31/119 主分类号 H01L29/94
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