发明名称 |
Using higher current to read a triggered phase change memory |
摘要 |
A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.
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申请公布号 |
US2006227591(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
US20050093864 |
申请日期 |
2005.03.30 |
申请人 |
LOWREY TYLER;PARKINSON WARD D;GORDON GEORGE A |
发明人 |
LOWREY TYLER;PARKINSON WARD D.;GORDON GEORGE A. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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