发明名称 |
Gate electrode stack and use of a gate electrode stack |
摘要 |
A gate electrode stack is disposed on a substrate in a semiconductor device. A gate conductor includes at least one layer of polysilicon and at least one layer of poly-Si<SUB>1-x</SUB>,Ge<SUB>x </SUB>material. The invention is also concerned with a process. This structure can be etched effectively since an end point detection is enabled.
|
申请公布号 |
US2006226473(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
US20050101378 |
申请日期 |
2005.04.07 |
申请人 |
WU DONGPING;GOLDBACH MATTHIAS;EGGER ULRICH |
发明人 |
WU DONGPING;GOLDBACH MATTHIAS;EGGER ULRICH |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|