ORGANIC METAL PRECURSOR AND METHOD OF MANUFACTURING A THIN FILM LAYER USING THE SAME

摘要

Provided are a novel organometallic precursor which is improved in volatility and is excellent in the reactivity with an oxidant, and a method for preparing a thin film by using the organometallic precursor. The organometallic precursor comprises a metal; and a ligand represented by the formula 1, wherein R1 and R2 are identical or different each other and are H or a C1-C5 alkyl group. Preferably the metal of the organometallic precursor is any one selected from the group consisting of strontium (Sr), barium (Ba), calcium (Ca), magnesium (Mg) and beryllium (Be). The method comprises the steps of providing a reaction material which comprises a first organometallic precursor represented by the formula 1 and a second organometallic precursor containing a metal different from that of the organometallic precursor, and an oxidant to the upper part of a substrate; and reacting the provided one to form a thin film.