| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film manufacturing apparatus and a method, and a thin film laminate which suppresses the radiation heat of a catalyst to a substrate, and moves a decomposed species to arrive at the substrate. SOLUTION: The thin film manufacturing apparatus 1 reacts one or more kinds of raw material gases under reduced pressure to form a thin film on a Si substrate 21 disposed in a chamber 17. It has one or more gas introducing pipes 13 disposed in the chamber 17 for introducing the raw material gases, a catalyst 10 disposed in the opening of the gas introducing pipe 13 kept at a specified distance from the Si substrate 21 for decomposing the raw material gases, and a shroud 82 for absorbing those not decomposed raw material gases without residing them in the chamber 17, thus irradiating the Si substrate 21 with the raw materials each in the form of a molecular beam. COPYRIGHT: (C)2007,JPO&INPIT
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