发明名称 |
Method and system for forming a high-k dielectric layer |
摘要 |
A method for preparing an interfacial layer for a high-k dielectric layer on a substrate. A surface of said substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen to nitridate the oxide film to form the interfacial layer. A high-k dielectric layer is formed on said interfacial layer.
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申请公布号 |
US2006228898(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
US20050093261 |
申请日期 |
2005.03.30 |
申请人 |
WAJDA CORY;IGETA MASANOBU;LEUSINK GERRIT J |
发明人 |
WAJDA CORY;IGETA MASANOBU;LEUSINK GERRIT J. |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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