发明名称 |
GALLIUM NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>The present invention relates to a gallium nitride-based compound semiconductor device and a method of manufacturing the same. According to the present invention, there is provided a gallium nitride-based III-V group compound semiconductor device comprising a gallium nitride-based semiconductor layer and an ohmic electrode layer formed on the gallium nitride-based semiconductor layer. The ohmic electrode layer comprises a contact metal layer, a reflective metal layer, and a diffusion barrier layer.</p> |
申请公布号 |
EP1709695(A1) |
申请公布日期 |
2006.10.11 |
申请号 |
EP20050721806 |
申请日期 |
2005.01.14 |
申请人 |
SEOUL OPTO-DEVICE CO., LTD. |
发明人 |
LEE, JONG-LAM |
分类号 |
H01L21/285;H01L33/10;H01L33/32;H01L33/36 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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