发明名称 |
Electrode of n-type nitride semiconductor and semiconductor device having the electrode |
摘要 |
The present invention provides an electrode making good ohmic contact with an n-type nitride semiconductor without requiring heat treatment at high temperature, wherein an aluminum layer, a silicon layer, a nickel layer and a gold layer are laminated in this order on an n-type gallium nitride based semiconductor, to form an n-type electrode. |
申请公布号 |
EP1710848(A1) |
申请公布日期 |
2006.10.11 |
申请号 |
EP20060015715 |
申请日期 |
1998.07.16 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
TAKEUCHI, KUNIO;HAYASHI, NOBUHIKO;NOMURA, YASUHIKO;TOMINAGA, KOUJI |
分类号 |
H01L21/285;H01L29/45;H01L33/32;H01L33/38;H01L33/40;H01S5/00;H01S5/042;H01S5/323 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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