TRANSISTOR WITH WORKFUNCTION-INDUCED CHARGE LAYER

摘要

An electrical switching device includes a semiconductor having a channel therein which is proximate to at least on channel tap in an extension region and also to a gate. A conductor (e.g., a metal) is disposed proximate to the extension region but is electrically isolated from both the extension region and the gate (e.g., through the use of one or more insulators). The conductor has a workfunction outside of the bandgap of a semiconductor in the extension region and therefore includes a layer of charge in the extension region. The magnitude and polarity of this layer of charge is controlled through selection of the metal, the semiconductor, and the insulator.