PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device

摘要

A method for depositing a chalcogenide layer (35) in a phase change memory (1), whereby a chalcogenide layer (35) is deposited by physical vapour deposition in a deposition chamber (50), having a collimator (60). The collimator (60) is formed by a holed disk arranged in a space (58) delimited by the chamber walls (51) and the chamber cover (57). The target is biased by a pulsed voltage to avoid charging and arching. The method is used to manufacture a phase change memory cell (2), whereby a resistive heater element (22) is formed in a dielectric layer (20), a mold layer (27) is formed over the dielectric layer (20); an aperture (31) is formed in the mold layer over the resistive heater element (22); a chalcogenide layer (35) is conformally deposited in the aperture (31) to define a phase change portion (35a); and a select element (13-15) is formed in electrical contact with the phase change portion (35a).