发明名称 CHEMICAL-MECHANICAL POLISHING OF METALS IN AN OXIDIZED FORM
摘要 The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, alpha-hydroxy-gamma-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.
申请公布号 EP1709130(A2) 申请公布日期 2006.10.11
申请号 EP20050704970 申请日期 2005.01.05
申请人 CABOT MICROELECTRONICS CORPORATION 发明人 DE REGE THESAURO, FRANCESCO;BRUSIC, VLASTA;BAYER, BENJAMIN, P.
分类号 C09G1/02;H01L21/321;H01L21/768 主分类号 C09G1/02
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