| 摘要 |
A semiconductor device comprises a power supply terminal (TV), a reference terminal (TG), a first p-channel MOS transistor (P1), a second p-channel MOS transistor (P2), a first n-channel MOS transistor (N1), and a second n-channel MOS transistor (N2). The power supply terminal (TV) is supplied with a power supply potential. The reference terminal (TG) is supplied with a reference potential. The first p-channel MOS transistor (P1) has a gate (17), a source (14), a drain (16), and a back gate (12). The gate, source and back gate are connected to the power supply terminal (TV). The second p-channel MOS transistor (P2) has a gate (18), a source (16), a drain (15), and a back gate (12). The source (16) is connected to the drain (16) of the first p-channel MOS transistor (P1). The back gate is connected to the power supply terminal (TV). The gate and drain are connected to the reference terminal (TG). The first n-channel MOS transistor (N1) has a gate (24), a source (21), a drain (23), and a back gate (11). The gate, source and back gate are connected to the reference terminal (TG). The second n-channel MOS transistor (N2) has a gate (25), a source (23), a drain (22), and a back gate (11). The source (23) is connected to the drain (23) of the first n-channel MOS transistor (N1). The back gate is connected to the reference terminal (TG). The gate and drain are connected to the power supply terminal (TV). |
