发明名称 |
METHOD FOR FORMING RESIST PATTERN |
摘要 |
<p>A method for forming a resist pattern is provided to reduce fabrication costs by irradiating a laser beam onto a selected region alone using a heat generating layer. A resist layer(11b) is formed on a substrate(10). A pre-bake is performed on the resist layer. An exposure process is performed on the resultant structure. A heat generating layer(12) is formed on the resist layer. A post exposure bake is performed on a selected region of the resist layer by irradiating a laser beam onto a predetermined portion of the heat generating layer. A silylation process is performed on the resist layer using a silylation agent. A developing process is performed thereon.</p> |
申请公布号 |
KR100635506(B1) |
申请公布日期 |
2006.10.11 |
申请号 |
KR20050112405 |
申请日期 |
2005.11.23 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
KWON, YOUNG GIL;LEE, SEONG TAEK |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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