发明名称 METHOD FOR FORMING RESIST PATTERN
摘要 <p>A method for forming a resist pattern is provided to reduce fabrication costs by irradiating a laser beam onto a selected region alone using a heat generating layer. A resist layer(11b) is formed on a substrate(10). A pre-bake is performed on the resist layer. An exposure process is performed on the resultant structure. A heat generating layer(12) is formed on the resist layer. A post exposure bake is performed on a selected region of the resist layer by irradiating a laser beam onto a predetermined portion of the heat generating layer. A silylation process is performed on the resist layer using a silylation agent. A developing process is performed thereon.</p>
申请公布号 KR100635506(B1) 申请公布日期 2006.10.11
申请号 KR20050112405 申请日期 2005.11.23
申请人 SAMSUNG SDI CO., LTD. 发明人 KWON, YOUNG GIL;LEE, SEONG TAEK
分类号 H01L21/027 主分类号 H01L21/027
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