摘要 |
<p>870,599. Semi-conductor rectifiers. STANDARD TELEPHONES & CABLES Ltd. April 8, 1960 [April 15, 1959], No. 12744/59. Class 37. A crystal rectifier 4 is soldered in low resistance electrical contact between the overlapping flattened ends 3 of a pair of lead-wires 1 and 2. A rectifying PN junction is formed in Si or Ge by diffusion of an impurity, e.g. phosphorus, and a P+ layer, of, e.g. B, may be formed on the other side. The major surfaces of the wafer may be nickel-plated to facilitate soldering of the silver lead-wires of which the flattened ends may have concave depressions to obtain better contact. The assembly, washed and etched, is encapsulated in an insulating material, e.g. a polyisocyanate, and covered with a moistureproof coating, e.g. paint.</p> |