发明名称 Reference voltage generating apparatus for use in a ferroelectric random access memory (FRAM) and a driving method therefor
摘要 A reference voltage generating apparatus and a driving method therefor are provided. The method of driving the reference voltage generating apparatus for supplying a reference voltage to read data from a ferroelectric memory cell including a ferroelectric capacitor and an access transistor comprises: re-storing, in a reference cell, data equal to data stored in the reference cell, in response to a first control signal, and generating a reference voltage, in the re-stored reference cell, in response to a second control signal, to compare the reference voltage with a voltage corresponding to data stored in the ferroelectric memory cell and to read the data stored in the ferroelectric memory cell. The reference cell includes a ferroelectric capacitor and an access transistor.
申请公布号 US7120045(B2) 申请公布日期 2006.10.10
申请号 US20050038304 申请日期 2005.01.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE KANG-WOON;MIN BYUNG-JUN;JEON BYUNG-GIL
分类号 G11C11/22;G11C5/14 主分类号 G11C11/22
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