NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nitride-based semiconductor light emitting device and its manufacturing method are provided to increase luminance and to reduce an operation voltage by forming an ohmic contact layer and a transparent electrode layer on a p-type clad layer. An n-type clad layer(203) is formed on a substrate(201). An active layer(204) and a p-type clad layer(205) are formed in turn on a predetermined region of the n-type clad layer. An ohmic contact layer(207) and a transparent electrode layer(206) are formed on the p-type clad layer. A p-type electrode pad(208) is formed across the entire upper surface of the ohmic contact layer and a partial upper surface of the transparent electrode layer. An n-type electrode pad(209) is formed on the n-type clad layer.