发明名称 |
Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal |
摘要 |
With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.
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申请公布号 |
US7118625(B2) |
申请公布日期 |
2006.10.10 |
申请号 |
US20030676094 |
申请日期 |
2003.10.02 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NISHIDA SHOJI;YOSHINO TAKEHITO;IWANE MASAAKI;MIZUTANI MASAKI |
分类号 |
C30B25/12;C30B29/06;C30B19/00;C30B19/02;H01L21/208;H01L31/04 |
主分类号 |
C30B25/12 |
代理机构 |
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地址 |
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