发明名称 Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal
摘要 With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.
申请公布号 US7118625(B2) 申请公布日期 2006.10.10
申请号 US20030676094 申请日期 2003.10.02
申请人 CANON KABUSHIKI KAISHA 发明人 NISHIDA SHOJI;YOSHINO TAKEHITO;IWANE MASAAKI;MIZUTANI MASAKI
分类号 C30B25/12;C30B29/06;C30B19/00;C30B19/02;H01L21/208;H01L31/04 主分类号 C30B25/12
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