发明名称 Semiconductor device
摘要 A semiconductor device capable of reducing a temperature increase during operation thereof is provided. In the semiconductor device, an interface chip is stacked on a plurality of stacked semiconductor elements. Both an "Si" interposer and a resin interposer are arranged under the plural semiconductor elements. The Si interposer is arranged between the resin interposer and the plural semiconductor elements. The Si interposer owns a thickness which is thicker than a thickness of a semiconductor element, and also has a linear expansion coefficient which is smaller than a linear expansion coefficient of the resin interposer, and further, is larger than, or equal to linear expansion coefficients of the plural semiconductor elements.
申请公布号 US7119428(B2) 申请公布日期 2006.10.10
申请号 US20040025634 申请日期 2004.12.28
申请人 ELPIDA MEMORY, INC. 发明人 TANIE HISASHI;HISANO NAE;OHTA HIROYUKI;IKEDA HIROAKI;ANJO ICHIRO;KATAGIRI MITSUAKI;WATANABE YUJI
分类号 H01L23/22;H01L25/18;H01L21/44;H01L23/053;H01L23/48;H01L25/065;H01L25/07;H01L25/10 主分类号 H01L23/22
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