发明名称 Wafer thinning using magnetic mirror plasma
摘要 A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.
申请公布号 US7118992(B2) 申请公布日期 2006.10.10
申请号 US20040914248 申请日期 2004.08.09
申请人 IFIRE TECHNOLOGIES, INC. 发明人 TURNER TERRY R.;SPAIN JAMES D.;BANKS RICHARD M.
分类号 H01L21/461;H01L21/301;H01L21/304;H01L21/768;H01L21/78;H01L23/48 主分类号 H01L21/461
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