| 摘要 |
A non-volatile memory device comprising a primary memory array, at least one non-volatile reference memory cell and sense circuitry. The primary memory array has a plurality of memory cells. The sense circuitry is used to monitor the logic state of the memory cells. In addition, the memory device has an input connection to couple an external reference current to the sense circuitry to be used during the programming of the reference memory cell.
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