发明名称 Solid-state image pickup device having lower power consumption
摘要 The invention is intended to raise the potential at an amplification transistor without increasing a source voltage, and to operate each pixel unit at a lower voltage. A reset transistor and a transfer transistor are serially connected between a driving power source (driving voltage Vdd) and an output of a PD. A floating diffusion (FD) node is provided between a source of the reset transistor and a drain of the transfer transistor. A selection transistor and an amplification transistor are serially connected between a vertical signal line and the driving power source. A gate of the amplification transistor is connected to the FD node. The amplification transistor and the selection transistor are connected at positions reversal to those in a conventional device; namely the amplification transistor is disposed on the side nearer to the vertical signal line. Then, the selection transistor is turned on after the end of reset operation by the reset transistor.
申请公布号 US7119840(B2) 申请公布日期 2006.10.10
申请号 US20020244780 申请日期 2002.09.16
申请人 SONY CORPORATION 发明人 MABUCHI KEIJI
分类号 H01L27/146;H01L27/14;H04N5/335;H04N5/369;H04N5/374 主分类号 H01L27/146
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