发明名称 Circuit and method for controlling boosting voltage
摘要 A circuit for use in a memory device is provided, comprising: a level detector that receives a plurality of programming input signals, detects which of the programming input signals are active, and outputs detected signals of varying weight dependant upon the number of programming input signals which are active; a signal generator that receives the detected signals from the level detector and outputs a generated signal having a varying voltage level proportional to the varying weight of the detected signals; and a voltage booster that controls a voltage level of a bias source based on the generated signal.
申请公布号 US7120058(B2) 申请公布日期 2006.10.10
申请号 US20050042608 申请日期 2005.01.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEO MYOUNGKYU;LEE HYOSANG
分类号 G11C16/04;G11C5/14;G11C11/34;G11C16/06;G11C16/12 主分类号 G11C16/04
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