ENHANCED LIGHT-EMITTING DIODE

摘要

A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a muf ti layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indiu m Tin Oxide (ITO), and a titanium/gold contact. In one embodiment, the contact for ms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with th e third layer; and is insulated from direct contact with the first layer.