发明名称 |
Composition for forming porous film, porous film and method for forming the same, interlevel insulator film |
摘要 |
Provided is a coating liquid which can easily form a porous film having desirably controlled thickness by the method used for a usual semiconductor process, and having an excellent mesopore channel structure. Specifically provided is a composition for forming porous film comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1): RnSi(OR')<SUB>4-n</SUB>. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.
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申请公布号 |
US7119354(B2) |
申请公布日期 |
2006.10.10 |
申请号 |
US20040810360 |
申请日期 |
2004.03.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAGIHASHI FUJIO;HAMADA YOSHITAKA;NAKAGAWA HIDEO;SASAGO MASARU |
分类号 |
C01B33/12;H01L47/00;C09D183/00;H01L21/312;H01L21/316;H01L21/768 |
主分类号 |
C01B33/12 |
代理机构 |
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主权项 |
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地址 |
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