VERTICAL TYPE LIGHT EMITTING DIODE AND METHOD OF FORMING THE SAME

摘要

A vertical type light emitting diode and its manufacturing method are provided to amplify tunneling effect and to reduce an operation voltage by using a super lattice layer. An N-gallium nitride layer(21) is formed on a substrate. An active layer(22) is formed on the N-gallium nitride layer. A P-gallium nitride layer(23) is formed on the active layer. A super lattice layer(24) is formed on the P-gallium nitride layer. An ohmic layer(25) is formed on the super lattice layer. A reflecting layer is formed on the ohmic layer. A metal supporting layer(30) is formed on the reflecting layer. The substrate is divided. An N-electrode(31) is formed on the N-gallium nitride layer where the substrate is divided.