| 摘要 |
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of V<SUB>t </SUB>on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the V<SUB>GATE</SUB>-V<SUB>t </SUB>limit for signals propagated through NMOS passgates is raised by applying a higher V<SUB>GATE</SUB>; in another arrangement, the V<SUB>t </SUB>is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.
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