HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION METHODS USING A FLUORINE-BASED CHEMICAL ETCHING GAS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE EMPLOYING THE SAME,申请号KR20050026185-传众专利搜索

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发明名称	HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION METHODS USING A FLUORINE-BASED CHEMICAL ETCHING GAS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE EMPLOYING THE SAME
摘要
申请公布号	KR20060104232(A)	申请公布日期	2006.10.09
申请号	KR20050026185	申请日期	2005.03.29
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	NAM, JEONG HOON
分类号	H01L21/205	主分类号	H01L21/205
代理机构		代理人
主权项
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