METHOD FOR FORMING RECESS GATE OF SEMICONDUCTOR DEVICE,申请号KR20050027050-传众专利搜索

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发明名称	METHOD FOR FORMING RECESS GATE OF SEMICONDUCTOR DEVICE
摘要
申请公布号	KR20060104697(A)	申请公布日期	2006.10.09
申请号	KR20050027050	申请日期	2005.03.31
申请人	HYNIX SEMICONDUCTOR INC.	发明人	KIM, DAE SIK
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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