LIGHT EMITTING DIODE

摘要

A light emitting diode is provided to transfer holes to an active layer easily and to improve light emitting efficiency by forming a plurality of holes on an upper of the light emitting diode. An n-type semiconductor layer(30) is formed on a substrate(20). An active layer(40) is formed on the n-type semiconductor layer. A p-type semiconductor layer(50) is formed on the active layer. A p-type contact layer(60) is formed on the p-type semiconductor layer. At least one hole(90) having a predetermined shape is formed on the p-type contact layer and the p-type semiconductor layer. A p-electrode(70) is formed on the p-type contact layer. The holes are formed on the p-electrode. The holes are extended to an upper surface of the active layer.