SEMICONDUCTOR MEMORY DEVICE WITH STRUCTURE OF OVER-DRIVING,申请号KR20050027380-传众专利搜索

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发明名称	SEMICONDUCTOR MEMORY DEVICE WITH STRUCTURE OF OVER-DRIVING
摘要
申请公布号	KR20060104891(A)	申请公布日期	2006.10.09
申请号	KR20050027380	申请日期	2005.03.31
申请人	HYNIX SEMICONDUCTOR INC.	发明人	KIM, JAE IL;JANG, JI EUN
分类号	G11C7/06	主分类号	G11C7/06
代理机构		代理人
主权项
地址

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