| 摘要 |
<p>An electron emission device has an optimized inner structure where the electrons emitted from the electron emission regions are straightly migrated toward the phosphor layers. The electron emission device includes first and second substrates facing each other, and cathode electrodes formed on the first substrate. Electron emission regions are formed on the cathode electrodes. An insulating layer (8) and gate electrodes (10) are formed on the cathode electrodes (6) and have openings exposing the electron emission regions. Phosphor layers are formed on the second substrate. An anode electrode is formed on a surface of the phosphor layers. The distance z between the cathode (6) and the anode electrodes (18) satisfies the following condition: 0.7 d ( ( V a ˆ’ V c ) / V g ) ‰¤ z ‰¤ 1.4 d ( ( V a ˆ’ V c ) / V g ) ,
where Vc indicates the voltage applied to the cathode electrodes, Vg the voltage applied to the gate electrodes, Va the voltage applied to the anode electrode, and d the distance between the cathode and the gate electrodes.</p> |
