发明名称 |
Method for forming a metal contact |
摘要 |
A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber. <IMAGE> |
申请公布号 |
EP0485130(B1) |
申请公布日期 |
2006.10.04 |
申请号 |
EP19910310146 |
申请日期 |
1991.11.01 |
申请人 |
STMICROELECTRONICS, INC. |
发明人 |
CHEN, FUSEN E.;LIOU, FU-TAI;LIN, YIH-SHUNG;DIXIT, GIRISH A.;WEI, CHE-CHIA |
分类号 |
H01L21/28;H01L21/285;C23C16/02;C23C16/20;H01L21/3205;H01L21/768;H01L23/485;H01L23/532 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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