| 摘要 |
The present invention provides a thin film device in which parasitic capacitance can be reduced as much as possible. In the case where a coil is provided so as to be insulated between an upper magnetic film and a lower magnetic film, the coil is constructed so that the cross section of the coil has the minimum width at its edges closest to the upper and lower magnetic films. Parasitic capacitance generated between the coil and the lower magnetic film and parasitic capacitance generated between the coil and the upper magnetic film are reduced and, in addition, parasitic capacitance generated between turns of the coil is also reduced.
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