METHOD FOR FABRICATION OF MOS TRANSISTOR,申请号KR20030100531-传众专利搜索

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发明名称	METHOD FOR FABRICATION OF MOS TRANSISTOR
摘要
申请公布号	KR100632057(B1)	申请公布日期	2006.10.04
申请号	KR20030100531	申请日期	2003.12.30
申请人		发明人
分类号	H01L27/092;H01L21/265;H01L21/336;H01L21/8228;H01L21/8238	主分类号	H01L27/092
代理机构		代理人
主权项
地址

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