发明名称 ISOTOPICALLY PURE SILICON-ON-INSULATOR WAFERS AND METHOD OF MAKING SAME
摘要 <p>A semiconductor wafer structure having a device layer, an insulating layer, and a substrate which is capable of supporting increased semiconductor device densities or increased semiconductor device power. One or more of the layers includes an isotopically enriched semiconductor material having a higher thermal conductivity than semiconductor material having naturally occurring isotopic ratios. The wafer structure may be formed by various techniques, such as wafer bonding, and deposition techniques.</p>
申请公布号 EP1706903(A1) 申请公布日期 2006.10.04
申请号 EP20040811841 申请日期 2004.11.22
申请人 ISONICS CORPORATION 发明人 BURDEN, STEPHEN, J.
分类号 H01L27/01;C30B19/00;C30B23/02;C30B25/02;H01L21/02;H01L21/20;H01L21/762;H01L29/16;H01L29/20;H01L33/64 主分类号 H01L27/01
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