Methods and apparatus for improved current density and feature fill control in ECD reactors

摘要

Apparatus and methods are disclosed for electroplating conductive films on semiconductor wafers (110), wherein field adjustment apparatus (100) is located in a reservoir (106) between a cathode (104) and an anode (114) to influence the electric field (116) used in the plating process. Field adjustment apparatus (100) is presented having one or more apertures, which may be selectively plugged to adjust the electrical fields during plating.