发明名称 |
Semiconductor structures for gallium nitride-based devices |
摘要 |
A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of Al<SUB>R</SUB>Ga<SUB>(1-R)</SUB>N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.
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申请公布号 |
US7115896(B2) |
申请公布日期 |
2006.10.03 |
申请号 |
US20030721488 |
申请日期 |
2003.11.25 |
申请人 |
EMCORE CORPORATION |
发明人 |
GUO SHIPING;GOTTHOLD DAVID;POPHRISTIC MILAN;PERES BORIS;ELIASHEVICH IVAN;SHELTON BRYAN S.;CERUZZI ALEX D.;MURPHY MICHAEL;STALL RICHARD A. |
分类号 |
H01L21/205;H01L29/06;C30B29/68;H01L21/20;H01L29/15;H01L29/20;H01L33/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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