发明名称 |
Structure to achieve high-Q and low insertion loss film bulk acoustic resonators |
摘要 |
A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.
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申请公布号 |
US7116034(B2) |
申请公布日期 |
2006.10.03 |
申请号 |
US20050065511 |
申请日期 |
2005.02.23 |
申请人 |
INTEL CORPORATION |
发明人 |
WANG LI-PENG;MA OING;RAO VALLURI |
分类号 |
H01L41/08;H03H3/02;H03H9/02;H03H9/17 |
主分类号 |
H01L41/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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