发明名称 Semiconductor integrated circuit
摘要 A semiconductor integrated circuit has nonvolatile memory and a logic circuit which uses information stored in the nonvolatile memory to perform logical operation. The nonvolatile memory comprises bit lines, word lines, and memory cells. The memory cell comprises MOS transistors whose gate electrodes are connected with a word line. Information storage is carried out according to whether one source/drain electrode of the MOS transistors is connected with a source line or floated. During other periods than a predetermined period in the operation of accessing the memory cell, the potential difference between the source/drain electrodes of the MOS transistors constituting the memory cell is zeroed. Subthreshold leakage current is prevented from passing through the memory cell on standby. During the predetermined period in accessing operation, a potential difference is produced between the source/drain electrodes of the MOS transistors. Therefore, the bit line potential can be varied by word line selection.
申请公布号 US7116571(B2) 申请公布日期 2006.10.03
申请号 US20040505216 申请日期 2004.08.20
申请人 HITACHI ULSI SYSTEMS CO., LTD. 发明人 MIYAZAKI SHINYA;KATOH KEI;YAMAUCHI KOUDOH
分类号 G11C17/00;G11C16/06;G11C17/12;G11C17/14;H01L27/10;H01L27/115 主分类号 G11C17/00
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