发明名称 |
Method of fabrication of non-volatile memory |
摘要 |
A non-volatile memory, which comprises an insulating substrate ( 11 ) that has a first electrode ( 18 ) that extends through the substrate from the front surface to the rear surface thereof; a second electrode ( 13 ) that is formed on one side of the insulating substrate ( 11 ); and a recording layer ( 12 ) that is clamped between the first electrode ( 18 ) and the second electrode ( 13 ) and whose resistance value varies when an electric pulse is applied across the first electrode ( 18 ) and the second electrode ( 13 ); wherein the insulating substrate ( 11 ) has a layered structure composed of an organic dielectric thin film ( 112 ) and an inorganic dielectric layer ( 111 ) that is thinner than the organic dielectric thin film ( 112 ); with the recording layer ( 12 ) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.
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申请公布号 |
US7115473(B2) |
申请公布日期 |
2006.10.03 |
申请号 |
US20050038034 |
申请日期 |
2005.01.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TANAKA HIDEYUKI;MORIMOTO KIYOSHI |
分类号 |
H01L21/336;G11B9/00;G11B9/04;G11C11/22;G11C16/02;H01L27/10;H01L27/24;H01L45/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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