| 摘要 |
A method of forming a liquid crystal display device with a pixel TFT, a bottom electrode of pixel capacitor CL, and a storage capacitor Cs in a pixel region, and an n-type TFT and a p-type TFT in a driving circuit region is disclosed. Firstly, a metal layer and an n-type silicon layer are formed on a transparent substrate. Thereafter, a patterning step is performed to define some predefined regions for above devices. After an active layer and a gate oxide layer are formed in order on all patterned surfaces, another patterning step is done to form a first, a second, and a third preserved region, respectively, for a LDD region of the n type TFT, source/drain regions for the p type TFT and a LDD region for pixel TFT and Cs. Thereafter, a photosensitive layer is deposited and patterned to form a reflective bumps region. A metal layer is formed and patterned to form a cover over the reflective bumps region and gate electrodes for aforementioned TFT as well as an upper electrode for Cs. Subsequently, a blanket nLDD implant is performed. Thereafter, a p type source/drain implant is carried out using a photoresist pattern as a mask. After removing the photoresist pattern, a passivation layer is formed on all areas. Next an annealing is performed to active the implant impurities. Another patterning process is then performed to expose the metal reflective layer over the bumps region and to form contact by patterning the passivation layer.
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