| 发明名称 |
Photomask and pattern forming method employing the same |
| 摘要 |
A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask. |
| 申请公布号 |
US7115344(B2) |
申请公布日期 |
2006.10.03 |
| 申请号 |
US20040777060 |
申请日期 |
2004.02.13 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
HASEGAWA NORIO;MURAI FUMIO;HAYANO KATSUYA |
| 分类号 |
G01F9/00;G03F1/08;G03C5/00;G03F1/00;G03F1/32;G03F1/68;G03F7/20;H01L21/027;H01L21/30 |
主分类号 |
G01F9/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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