发明名称 |
System and method for providing a dry-wet-dry etch procedure to create a sidewall profile of a via |
摘要 |
A system and method is disclosed for providing a dry-wet-dry etch procedure to create a sidewall profile of a via in a semiconductor device. A first vertical anisotropic dry etch process is applied to etch through a first portion of a dielectric layer. An isotropic wet etch process is then applied to etch a sloping surface in the sidewalls of the via cavity. A second vertical anisotropic dry etch process is then applied to extend the sloping sidewalls of the via cavity down to a substrate of the semiconductor device. The smooth sloping surfaces of the sidewalls are formed without a prior art concave surface of the type that interferes with a via fill process.
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申请公布号 |
US7115500(B1) |
申请公布日期 |
2006.10.03 |
申请号 |
US20040958539 |
申请日期 |
2004.10.04 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
TORRES VICTOR M. |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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