发明名称 Semiconductor device and semiconductor device producing system
摘要 An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.
申请公布号 US7115903(B2) 申请公布日期 2006.10.03
申请号 US20020330024 申请日期 2002.12.27
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ISOBE ATSUO;DAIRIKI KOJI;SHIBATA HIROSHI;KOKUBO CHIHO;ARAO TATSUYA;HAYAKAWA MASAHIKO;MIYAIRI HIDEKAZU;SHIMOMURA AKIHISA;TANAKA KOICHIRO;YAMAZAKI SHUNPEI;AKIBA MAI
分类号 H01L21/84;B23K26/00;B23K26/03;B23K26/067;B23K26/08;B23K26/10;B23K26/42;H01L21/20;H01L21/77;H01L29/786 主分类号 H01L21/84
代理机构 代理人
主权项
地址