发明名称 |
Semiconductor device and semiconductor device producing system |
摘要 |
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle. |
申请公布号 |
US7115903(B2) |
申请公布日期 |
2006.10.03 |
申请号 |
US20020330024 |
申请日期 |
2002.12.27 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISOBE ATSUO;DAIRIKI KOJI;SHIBATA HIROSHI;KOKUBO CHIHO;ARAO TATSUYA;HAYAKAWA MASAHIKO;MIYAIRI HIDEKAZU;SHIMOMURA AKIHISA;TANAKA KOICHIRO;YAMAZAKI SHUNPEI;AKIBA MAI |
分类号 |
H01L21/84;B23K26/00;B23K26/03;B23K26/067;B23K26/08;B23K26/10;B23K26/42;H01L21/20;H01L21/77;H01L29/786 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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