发明名称 |
Abrasive, method of polishing target member and process for producing semiconductor device |
摘要 |
To polish polishing target surfaces of SiO<SUB>2 </SUB>insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm<SUP>3 </SUP>and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.
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申请公布号 |
US7115021(B2) |
申请公布日期 |
2006.10.03 |
申请号 |
US20020042271 |
申请日期 |
2002.01.11 |
申请人 |
HITACHI CHEMICAL COMPANY, LTD. |
发明人 |
YOSHIDA MASATO;ASHIZAWA TORANOSUKE;TERAZAKI HIROKI;OOTUKI YUUTO;KURATA YASUSHI;MATSUZAWA JUN;TANNO KIYOHITO |
分类号 |
B24B1/00;B24B37/00;C01F17/00;C09K3/14;H01L21/304;H01L21/3105 |
主分类号 |
B24B1/00 |
代理机构 |
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