HIGH VOLTAGE GENERATING CIRCUIT WITH IMPROVING THE HIGH VOLTAGE GENERATING EFFICIENCY AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME

摘要

A high voltage generation circuit and a nonvolatile semiconductor memory device including the same are provided to improve high voltage generation efficiency, by preventing charges of an output node from leaking toward a power supply voltage. An output node(N160) provides an output signal. A high voltage generation part(110) drives the output signal with a high voltage of a higher level than a power supply voltage. A power supply voltage driving part(120) drives the output signal with the power supply voltage. The power supply voltage driving part comprises a first MOS transistor of depletion and first channel, which has one side connection connected to the output node, and a second MOS transistor of second channel having one side connection connected to another side connection of the first MOS transistor and another side connection connected to the power supply voltage. The second MOS transistor is gated with the voltage level of one side connection of the second MOS transistor so as to be turned off.